2SD1117 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1117
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 40V(Min)
·Low Collector-Emitter Saturation Voltage-
: V_CE(sat)= 1.2V(Max) @I_C= 5A
·Wide Area of Safe Operation
·Complement to Type 2SB850
APPLICATIONS
·Designed for audio amplifier, series regulators and general
purpose power amplifiers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
40
V
V_CEO
Collector-Emitter Voltage
40
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
10
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
2
A
50
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
2.5
℃/W
isc Website：www.iscsemi.cn