2SD1114 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1114
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
V(BR)CBO
Collector - Base Breakdown Voltage _{IC= 0.1mA; IE= 0}
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 60mA
VBE(sat) Base-Emitter Saturation Voltage
ICEO
Collector Cutoff Current
IC= 6A; IB= 60mA
VCB= 400V; Rbe = ∞
hFE
DC Current Gain
IC= 4A; VCE= 2V
Switching Times
ton
Turn-On Time
Toff
Turn-On Time
IC= 6A; IB1= IB2= 60mA;
MIN TYP. MAX UNIT
6
V
400
V
400
V
1.5
V
2.0
V
0.1 mA
500
2.0
μs
23
μs
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