2SD1114 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1114
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
·High DC Current Gain
: hFE= 500(Min) @IC= 4A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Solenoid/ relay drivers
·Motor control
·Electronic automotive ignition
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
ICM
PC
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@ TC=25℃
Junction Temperature
Storage Temperature Range
400
V
400
V
7
V
6
A
10
A
50
W
150
℃
-55~150
℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}