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| 2SD111 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD111
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; RBE= â
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 1A
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC=0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
fT
Current-GainâBandwidth Product
IC= 1A ; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 50V; f= 1MHz
MIN TYP. MAX UNIT
80
V
10
V
1.5
V
2.5
V
0.5 mA
10 mA
30
300
10
1
MHz
200
pF
 hFE-2 Classifications
R
O
Y
30-90 50-150 100-300
isc Websiteï¼www.iscsemi.cn
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