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2SD111 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD111
DESCRIPTION
·High Power Dissipation-
: PC= 100W@TC= 25â
·High Current Capability-
: IC = 10A
APPLICATIONS
·Designed for power amplifier , power switching ,DC-DC
converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
10
A
IE
Emitter Current-Continuous
-10
A
IBB
Base Current-Continuous
3
A
PC
Collector Power Dissipation @TC=25â 100
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-65~150 â
isc Websiteï¼www.iscsemi.cn
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