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| 2SD1105 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1105
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(on) Base-Emitter On Voltage
IC= 5A ; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 5A ; VCE= 4V
fT
Current-GainâBandwidth Product IC= 0.5A;VCE= 10V
MIN TYP. MAX UNIT
80
V
7
V
2
V
1.5 V
30 μA
40
40
120
1
MHz
 hFE-2 Classifications
P
O
40-80
60-120
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