2SD1105 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1105
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 80V (Min)
·Wide Area of Safe Operation
·High Power and High Reliability
APPLICATIONS
·Designed for high power AF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
V_CBO
Collector-Base Voltage
120
V
V_CEO
Collector-Emitter Voltage
80
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
15
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
30
A
200
W
150
℃
-65~150 ℃
isc Website：www.iscsemi.cn