2SD108 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Darlingtion Power Transistor

isc Silicon NPN Darlingtion Power Transistor
INCHANGE Semiconductor
2SD108
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA
VBE(sat)-1 Base-Emitter Saturation voltage
IC= 3A; IB= 12mA
VBE(sat)-2 Base-Emitter Saturation voltage
IC= 5A; IB= 20mA
ICEO
Collector Cutoff current
VCE= 80V; IB=0
ICBO
Collector Cutoff current
VCB= 80V; IE=0
IEBO
Emitter Cut-off current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
MIN MAX UNIT
80
V
2.0
V
4.0
V
3.0
V
4.5
V
1.0
mA
0.5
mA
5
mA
2000
750
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