2SD108 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Darlingtion Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlingtion Power Transistor
2SD108
DESCRIPTION
·High DC current gain-
: hFE = 2000 (Min) @ IC = 1A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)=80V(Min)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power switching
·Hammer drivers
·Series and shunt regulator
·Audio amplifiers
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current -Continuous
5
A
ICP
Collector Current-Peak
10
A
IB
Base Current
0.12
A
PC
Collector Power Dissipation@TC=25℃
50
W
Tj
Junction Temperature
Tstg
Storage Temperature
150
℃
-65~150 ℃
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