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| 2SD1073 Datasheet, PDF (2/3 Pages) Fuji Electric – HIGH POWER DARLINGTON | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=0.1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=1A;IB=10mA
VBEsat Base-emitter saturation voltage
IC=1A;IB=10mA
ICBO
Collector cut-off current
VCB=300V; IE=0
IEBO
Emitter cut-off current
VEB=30V; IC=0
hFE
DC current gain
IC=2A ; VCE=2V
Product Specification
2SD1073
MIN TYP. MAX UNIT
300
V
250
V
30
V
1.5
V
2.0
V
0.1 mA
0.1 mA
1000
2
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