2SD1073 Datasheet, PDF (1/3 Pages) Fuji Electric – HIGH POWER DARLINGTON

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1073
DESCRIPTION
·With TO-220 package
·High DC current gain
·DARLINGTON
·Low saturation voltage
APPLICATIONS
·Audio power amplifiers
·Relay and solenoid drivers
·Motor controls
·General purpose power amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current-continuous
I_B
Base current
P_C
Collector power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Rθjc
Thermal resistance junction to case
VALUE
300
250
30
4
0.3
60
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
MAX
2.0
UNIT
℃/W