2SD1072 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1072
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
450
V
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞
350
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
20
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 30mA
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 30mA
2.0
V
ICBO
Collector Cutoff Current
VCB=450V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 20V; IC=0
50 mA
hFE
DC Current Gain
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 3A; VCE= 1.5V
500
IC = 3A,IB1 = IB2= 30mA;
RL= 20Ω,tp= 20μs; Duty Cycle
≤2.0%
1.5 μs
12 μs
6.0 μs
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