2SD1072 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1072
DESCRIPTION
·Low Collector Saturation Voltage
·High DC Current Gain
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·DC-DC converter
·Solid state relay
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO(SUS) Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
450
V
350
V
20
V
5
A
0.3
A
60
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.0 ℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}