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| 2SD1071 Datasheet, PDF (2/2 Pages) Fuji Electric – TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1071
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VZ
Zener Voltage
IZ= 0.1mA
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 150mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 15mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 15mA
ICBO
Collector Cutoff Current
VCB= 300V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
hFE
DC Current Gain
IC= 4A; VCE= 2V
MIN TYP. MAX UNIT
300
450
V
6
V
1.5
V
2.0
V
0.1 mA
150 mA
500
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