2SD1071 Datasheet, PDF (1/2 Pages) Fuji Electric – TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1071
DESCRIPTION
·Low Collector Saturation Voltage
·High DC Current Gain
·High Reliability
APPLICATIONS
·Audio power amplifiers
·Relay & solenoid drivers
·Motor controls
·General purpose power amplifiers
·Including zener diode
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
V_CEO
V_EBO
V_Z
I_C
I_B
P_C
T_J
T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Zener Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T_C=25℃
Junction Temperature
Storage Temperature Range
(450)
V
300
V
6
V
300
V
6
A
2.5
A
40
W
150
℃
-40~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
3.0 ℃/W
isc website：www.iscsemi.cn
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