2SD1038 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1038
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A; IB= 1.5A
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 15A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= -0.5A; VCE= 10V
MIN TYP. MAX UNIT
100
V
0.5
V
1.5
V
10 μA
5
μA
50
200
20
15
MHz
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