2SD1038 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1038
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 120V(Min)
·High Current Capability
·Good Linearity of hFE
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
40
A
180
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}