2SC6093 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6093
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.35A; IB= 0.27A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.7A; IB= 0.54A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.7A; IB= 0.54A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC=0.5A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
0.1
0.3
V
2.0
V
1.5
V
10 μA
40
130 mA
10
5.3
7.5
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