2SC6093 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6093
DESCRIPTION
·Low saturation voltage
·Built-in damper diode type
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage color display horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
5
A
IB
Base Current- Continuous
2
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
12
A
2
W
25
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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