2SC6082 Datasheet, PDF (2/2 Pages) Sanyo Semicon Device – 50V / 15A High-Speed Switching Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6082
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.375A
VBE(sat) Base-Emitter Saturation Voltage
IC= 7.5A; IB= 0.375A
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
hFE-1
DC Current Gain
IC= 330mA; VCE= 2V
hFE-2
DC Current Gain
IC= 10A; VCE= 2V
tstg
Storage Time
tf
Fall Time
IC= 5A, IB1= 0.25A; IB2= -0.25A
0.4
V
1.2
V
10 μA
200
560
50
560
ns
37
ns
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