2SC6082 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 50V / 15A High-Speed Switching Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6082
DESCRIPTION
·Large current capacitance
·High speed switching
·Low saturation voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
15
A
IB
Base Current- Continuous
3
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
20
A
2
W
23
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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