2SC5949 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – Transistor Silicon NPN Triple Diffused Type

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5949
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
200
V
VCE_(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VBE(_on) Base-Emitter On Voltage
IC= 8A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 200V ; IE= 0
3.0
V
1.5
V
5 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5 μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
55
160
hFE-2
DC Current Gain
IC= 8A ; VCE= 5V
35
COB
Output Capacitance
IE=0 ; VCB= 10V;f= 1.0MHz
470
pF
fT
Current-Gain—Bandwidth Product
IC=1A ; VCE= 5V
25
MHz
 h_FE-1 Classifications
R
O
55-110 80-160
isc website：www.iscsemi.cn
2 _{isc & iscsemi is registered trademark}