2SC5949 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Transistor Silicon NPN Triple Diffused Type

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5949
DESCRIPTION
·High Current Capability
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 200V(Min)
·Complement to Type 2SA2121
APPLICATIONS
·Power amplifier applications
·Recommended for audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
200
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
1.5
A
220
W
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
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