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| 2SC5890 Datasheet, PDF (2/11 Pages) Renesas Technology Corp – Silicon NPN Epitaxial UHF / VHF wide band amplifier | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5890
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
V(BR)CBO Collector-Base Breakdown Voltage
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
fT
Current-GainâBandwidth Product
COB
Output Capacitance
Cre
Reverse Transfer Capacitance
︱S21e︱2 Insertion Power Gain
PG
Power Gain
NF
Noise Figure
CONDITIONS
IC= 10μA ; IE= 0
VCB= 12V; IE= 0
VCE= 9V; RBE= â
VEB= 1.5V; IC= 0
IC= 20mA ; VCE= 5V
IC= 30mA ; VCE= 5V ;f= 1 GHz
IE= 0 ; VCB= 5V;f= 1.0MHz
IE= 0 ; VCB= 5V;f= 1.0MHz
IC= 30mA ; VCE= 5V;f= 1GHz
IC= 30mA ; VCC= 5V;f= 900MHz
IC= 5mA ; VCC= 5V;f= 900MHz
MIN TYP. MAX UNIT
20
V
1
μA
1
mA
10 μA
100
200
5.5 7.8
GHz
0.9 1.5 pF
0.85
pF
11
dB
9.5 12
dB
1.0 1.9 dB
isc websiteï¼www.iscsemi.cn
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