 English |
|
|
|
|
|
|
|
| 2SC5890 Datasheet, PDF (1/11 Pages) Renesas Technology Corp – Silicon NPN Epitaxial UHF / VHF wide band amplifier | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5890
DESCRIPTION
·High Gain Bandwidth Product
fT = 7.8 GHz TYP.
·High power gain and low noise figure ;
PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz
APPLICATIONS
·Designed for use in UHF ~ VHF wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
12
V
VEBO Emitter-Base Voltage
1.5
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
75
mA
0.7
W
150
â
-55~150
â
isc websiteï¼www.iscsemi.cn
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese