2SC5622 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type(For horizontal deflection output)

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5622
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 1500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 4A; VCE= 5V
fT
Current-Gain—Bandwidth Product IE= 0.1A ; VCE= 10V
Switching times
tstg
Storage Time
tf
Fall Time
IC= 4A , IB1=0.8A; IB2= -1.6A;
5.0
V
1.5
V
1.0 mA
50 mA
5
9
3
MHz
5
μs
0.5 μs
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