2SC5622 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type(For horizontal deflection output)

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5622
DESCRIPTION
·High Breakdown Voltage
·High Switching Speed
·Low Saturation Voltage
·Wide area of safe operation
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Character display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector-Emitter Voltage
1500
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
6
A
ICM
Collector Current- Continuous
12
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
3
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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