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2SC5387 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5387
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
600
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=B 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB=B 2A
ICBO
Collector Cutoff Current
VCB= 1200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
V
1.5
V
1
mA
10 μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
15
35
hFE-2
DC Current Gain
IC= 8A ; VCE= 5V
4.3
7.8
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 10V
1.7
MHz
COB
Output Capacitance
tstg
Storage Time
tf
Fall Time
IE= 0 ; VCB= 10V; ftest= 1.0MHz
ICP= 6A , IB1(end)= 1.2A;fH= 64kHz
130
pF
2.5 3.5 μs
0.15 0.3 μs
isc Website:www.iscsemi.cn
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