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2SC5387 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5387
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
600
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=B 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB=B 2A
ICBO
Collector Cutoff Current
VCB= 1200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
V
1.5
V
1
mA
10 μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
15
35
hFE-2
DC Current Gain
IC= 8A ; VCE= 5V
4.3
7.8
fT
Current-GainâBandwidth Product
IC= 0.1A ; VCE= 10V
1.7
MHz
COB
Output Capacitance
tstg
Storage Time
tf
Fall Time
IE= 0 ; VCB= 10V; ftest= 1.0MHz
ICP= 6A , IB1(end)= 1.2A;fH= 64kHz
130
pF
2.5 3.5 μs
0.15 0.3 μs
isc Websiteï¼www.iscsemi.cn
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