2SC5387 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5387
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1200V (Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Horizontal deflection output for high resolution display,
color TV.
·High speed switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1200
V
V_CEO
Collector-Emitter Voltage
600
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current- Continuous
10
A
I_CM
Collector Current- Pulse
20
A
I_BB
Base Current- Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
5
A
50
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn