2SC5172 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5172
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage
IC= 2.0A; IB= 0.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.0A; IB= 0.25A
ICBO
Collector Cutoff Current
VCB=500V ; IE=0
IEBO
Emitter Cutoff Current
VEB=7V ; IC=0
hFE-1
DC Current Gain
IC=1mA ; VCE= 5V
hFE-2
DC Current Gain
IC=0.5 A ; VCE= 5V
MIN TYP. MAX UNIT
400
V
600
V
1.0
V
1.3
V
20 μA
100 nA
13
20
65
isc Website：www.iscsemi.cn
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