2SC5172 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector Breakdown Voltage
: VCEO =400V
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
isc Product Specification
2SC5172
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
Collector Power Dissipation
Pc
@ TC=25℃
TJ
Junction Temperature
2
A
25
W
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
isc Website：www.iscsemi.cn