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| 2SC4371 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4371
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
400
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
500
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 1A
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
1.0
V
1.5
V
100 μA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
1
mA
hFE-1
DC Current Gain
IC= 3A ; VCE= 5V
12
hFE-2
DC Gurrent Gain
IC= 5A ; VCE= 5V
8
Switching times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IB1= -IB2= 0.4A; VCCâ200V
RL= 50Ω;PW=20μs Dutyâ¤1%
1.0 μs
2.5 μs
1.0 μs
isc Websiteï¼www.iscsemi.cn
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