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2SC4371 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4371
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400(Min)
·Excellent Switching Times-
: tr= 1.0μs(Max), tf= 1.0μs(Max)@ IC= 4A
APPLICATIONS
·Switching regulator application
·High voltage switching application
·High Speed DC-DC converter application
·Fluorescent light ballastor application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
7
A
IBB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
1
A
2
W
30
150
℃
-55~150 ℃
isc Website:www.iscsemi.cn