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| 2SC4370 Datasheet, PDF (2/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4370
ELECTRICAL CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 500mA ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 160V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE
DC Current Gain
IC= 100mA ; VCE= 5V
COB
Output Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
fT
Current-GainâBandwidth Product
IC= 100m A ; VCE= 10V
MIN TYP. MAX UNIT
160
V
1.5
V
1.0
V
1.0 μA
1.0 μA
70
240
25
pF
100
MHz
 hFE Classifications
O
Y
70-140 120-240
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