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| 2SC4370 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4370
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
VCEO= 160V(Min)
·Complement to Type 2SA1659
·Full-mold package that does not require an insulating
board or bushing when mounting.
APPLICATIONS
·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5.0
V
IC(DC)
Collector Current(DC)
1.5
A
IB(DC)
PC
TJ
Base Current
Collector Power Dissipation
@TC=25â
Junction Temperature
Tstg
Storage Temperature
0.15
A
20
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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