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| 2SC4368 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4368
ELECTRICAL CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 500mA; VCE= 10V
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-GainâBandwidth Product
IC= 500m A; VCE= 10V
150
V
1.5
V
10 μA
10 μA
40
140
35
pF
4
MHz
isc Websiteï¼www.iscsemi.cn
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