 English |
|
|
|
|
|
|
|
| 2SC4368 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4368
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: VCEO= 150V(Min)
·Complement to Type 2SA1657
APPLICATIONS
·Designed for TV, monitor vertical output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current-Continuous
1.5
A
IBB
Base Current-Continuous
Collector Power Dissipation
@TC= 25â
PC
Collector Power Dissipation
@Ta= 25â
TJ
Junction Temperature
Tstg
Storage Temperature
0.5
A
20
W
2
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese