2SC4332-Z Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Silicon Epitaxia

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4332-Z
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1^NOTE Collector-Emitter Saturation Voltage IC= 3A; IB= 150mA
VCE(sat)-2^NOTE Collector-Emitter Saturation Voltage IC= 4A; IB= 200mA
VBE(sat)-1NOTE Base-Emitter Saturation Voltage
IC= 3A; IB= 150mA
VBE(sat)-2NOTE Base-Emitter Saturation Voltage
IC= 4A; IB= 200mA
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1NOTE
DC Current Gain
IC= 0.5A; VCE= 2V
hFE-2NOTE
DC Current Gain
IC= 1A; VCE= 2V
hFE-3NOTE
DC Current Gain
IC= 3A; VCE= 2V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product
NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse
IC= 500mA; VCE= 10V
 hFE-2 Classifications
M
L
K
100-200 150-300 200-400
MIN TYP. MAX UNIT
0.3
V
0.5
V
1.2
V
1.5
V
10 μA
10 μA
100
100
400
60
130
pF
150
MHz
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