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2SC4332-Z Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Silicon Epitaxia | |||
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4332-Z
DESCRIPTION
·Low collector saturation voltage
·Fast switching speed
·High DC current gain and excellent linearity
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·This transistor is ideal for use in Switching regulators,
DC/DC converters,motor drivers,Solenoid drivers
and other low-voltage power supply devices,as well
as for high-current switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak NOTE1
Collector Power Dissipation
PC
@ TC=25â
Collector Power Dissipation
@Ta=25â NOTE2
TJ
Junction Temperature
10
A
15
W
1.0
150
â
Tstg
Storage Temperature Range
NOTE1:PWâ¤300ms,Duty cycle â¤10%
NOTE2:Printing boarding mounted
-55~150
â
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