2SC4288 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
isc Product Specification
2SC4288
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA; IB= 0
600
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB=2.5A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB=2.5A
2.0
V
ICBO
Collector Cutoff Current
VCB= 1500V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 mA
hFE
DC Current Gain
IC= 3A; VCE= 5V
8
tstg
Storage Time
tf
Fall Time
IC= 10A, IB1=1.8A; IB2= -3.6A
3.0 μs
0.2 μs
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