2SC4288 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
isc Product Specification
2SC4288
DESCRIPTION
·High Switching Speed
·High Breakdown Voltage-
: V(BR)CBO= 1500V(Min)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
20
A
200
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.com
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