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| 2SC4265 Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4265
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10μA ; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= â
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
fT
Current-GainâBandwidth Product
IC= 10mA ; VCE= 10V
COB
Output Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
MIN TYP. MAX UNIT
30
V
20
V
0.5 μA
10 μA
1.0
V
40
600
MHz
1.5 pF
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