2SC4265 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4265
DESCRIPTION
·Low Noise
·High Gain
APPLICATIONS
·Designed for use in VHF RF amplifier, local oscillator, mixer.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
30
V
V_CEO Collector-Emitter Voltage
20
V
V_EBO Emitter-Base Voltage
3.0
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
50
mA
0.1
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn