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| 2SC4250 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (TV VHF MIXER APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4250
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB= 25V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
hFE
DC Current Gain
IC= 5mA ; VCE= 10V
fT
Current-GainâBandwidth Product
IC= 5mA;VCE= 10V
Cre
Reverse Transfer Capacitance
Gce
Conversion Gain
NF
Noise Figure
IE= 0 ; VCB= 10V; f= 1MHz
VCC= 12V; f= 200MHz
fL= 260MHz
MIN TYP. MAX UNIT
0.1 μA
1.0 μA
20
V
40
300
900 1400
MHz
0.45 0.6 pF
20 25
dB
4.3
6
dB
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