2SC4250 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (TV VHF MIXER APPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4250
DESCRIPTION
·High Conversion Gain-
G_ce = 25 dB TYP.
·Low Reverse Transfer Capacitance-
C_re = 0.45 pF TYP.
APPLICATIONS
·Designed for TV VHF mixer applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
30
V
V_CEO Collector-Emitter Voltage
20
V
V_EBO Emitter-Base Voltage
3
V
I_C
Collector Current-Continuous
50
mA
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
25
mA
0.1
W
125
℃
-55~125
℃
isc Website：www.iscsemi.cn