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2SC4242 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTOR(7A,400V,40W)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4242
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB=B 0.8A
ICBO
Collector Cutoff Current
VCB= 450V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
hFE
DC Current Gain
IC= 4A ; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5A , IB1= -IB2=1A
RL= 30Ω; VCC= 150V
MIN TYP. MAX UNIT
400
V
450
V
8
V
0.8
V
1.2
V
100 μA
100 μA
10
1.0 μs
2.5 μs
0.5 μs
isc Website:www.iscsemi.cn
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