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2SC4242 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTOR(7A,400V,40W)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4242
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
·Fast Switching Speed
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max.)@ IC= 4.0A
APPLICATIONS
·Designed for use in high-voltage, high-speed , power
switching in inductive circuit , they are particularly suited
for 115 and 220V switchmode applications such as swit-
ching regulator’s, inverters, DC-DC converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
450
VCEO
Collector-Emitter Voltage
400
VEBO
Emitter-Base Voltage
8
IC
Collector Current-Continuous
7
ICM
Collector Current-Peak
14
IBB
Base Current-Continuous
2
Collector Power Dissipation
PC
@ TC=25℃
40
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
3.125 ℃/W
isc Website:www.iscsemi.cn