 English |
|
|
|
|
|
|
|
| 2SC4227 Datasheet, PDF (2/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4227
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
hFE
DC Current Gain
IC= 7mA ; VCE= 3V
fT
Current-GainâBandwidth Product IC= 7mA ; VCE= 3V
Cre
Feed-Back Capacitance
︱S21e︱2 Insertion Power Gain
NF
Noise Figure
IE= 0 ; VCB= 3V;f= 1.0MHz
IC= 7mA ; VCE= 3V;f= 1.0GHz
IC= 7mA ; VCE= 3V;f= 1.0GHz
MIN TYP. MAX UNIT
0.8 μA
0.8 μA
40
240
4.5 7.0
GHz
0.45 0.9 pF
10
12
dB
1.4 2.7 dB
 hFE Classification
Class
R33
R34
R35
Marking R33
R34
R35
hFE
40-90 70-150 110-240
isc websiteï¼www.iscsemi.cn
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese