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| 2SC4227 Datasheet, PDF (1/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4227
DESCRIPTION
·Low Noise
NF = 1.4 dB TYP., @VCE = 3 V, IC = 7 mA, f = 1.0 GHz
·High Gain
︱S21e︱2 = 12 dB TYP. @VCE = 3 V, IC = 7 mA, f = 1.0 GHz
APPLICATIONS
·Designed for VHF, UHF low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
10
V
1.5
V
65
mA
0.15
W
150
â
-65~150
â
isc websiteï¼www.iscsemi.cn
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