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| 2SC4215 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY FM, RF, MIX, IF AMPLIFIERAPPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4215
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1mA ; VCE= 6V
fT
Current-GainâBandwidth Product IC= 1mA ; VCE= 6V
Cre
Feed-Back Capacitance
rbbâ ⢠CC Base Time Constant
Gpe
Power Gain
NF
Noise Figure
VCB= 10V;f= 1.0MHz
IE= -1mA ; VCB= 6V; f= 30MHz
IE= -1mA ; VCC= 6V;f= 100MHz
IE= -1mA ; VCC= 6V;f= 100MHz
MIN TYP. MAX UNIT
0.1 μA
0.5 μA
40
200
260 550
MHz
0.55
pF
25
ps
17
23
dB
2
5
dB
 hFE Classification
Class
R
O
Y
hFE
40-80 70-140 100-200
isc websiteï¼www.iscsemi.cn
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